Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

Shuhan Jing; Adnan Younis; Dewei Chu; Sean Li

doi:10.3934/matersci.2015.2.28

AIMS Materials Science, 2015, 2(2): 28-36. doi: 10.3934/matersci.2015.2.28. Research article Special Issues

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Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

Shuhan Jing, Adnan Younis, Dewei Chu, Sean Li

School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, NSW, Australia

Received date: , Accepted date: , Published date:

Special Issues: Multifunctional Oxide Materials

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The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

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Keywords: ZnO; resistive switching; electrochemical deposition

Citation: Shuhan Jing, Adnan Younis, Dewei Chu, Sean Li. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films. AIMS Materials Science, 2015, 2(2): 28-36. doi: 10.3934/matersci.2015.2.28

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Copyright Info: 2015, Adnan Younis, et al., licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution Licese (http://creativecommons.org/licenses/by/4.0)

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