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Formation of (Cu)n & (Cu2O)n nanostructures with the stability of their clusters

1 Department of Physics and Mathematics, Kazakh National Pedagogical University, Almaty, Kazakhstan
2 Department of Physics and Technics, Karaganda State University, Karaganda, Kazakhstan

We investigated the electronic structure and the properties of cupper (Cu) and compound semiconductor (Cu2O) by with the help of computer simulation of the programs developed by us and obtaining various morphologies and properties of Cu nanostructures by the method of template synthesis, including the study of the direction of formation processes and the practical application of ion tracks. In calculations of the computer simulation programs developed by us, the general and area-predicted density of states and the band dispersion of optimized crystal structures with different structural units (Cu)n (n = 6, 12) and (Cu2O)n (n = 16, 23) were described. Accordingly, this leads to the prediction that (Cu)n at n = 12 and (Cu2O)n at n = 23 take a high electron density, and that the energy maximum points arise where there is a low electron density and, conversely, for electron energy minima, the electron density is high. The maxima of the level energy n = 2 for (Cu)n and (Cu2O)n, the corresponding electron densities also reached their maximums, but these values of the metallic and semiconductor junctions, respectively, were sharply different in value when compared with each other. This indicates that the changes in the electronic states were due mainly to the replacement of the oxygen atom and subsequent modification of the crystalline field.
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Keywords BCC structure; FCC structure; clusters; direct space; inverse space; lattice

Citation: Kulpash Iskakova, Rif Akhmaltdinov, Temirgali Kuketaev. Formation of (Cu)n & (Cu2O)n nanostructures with the stability of their clusters. AIMS Materials Science, 2018, 5(3): 543-550. doi: 10.3934/matersci.2018.3.543


  • 1. Koiller B, Davidovich MAM (1990) Small-crystal approach to ordered semiconductor compounds. Phys Rev Lett 41: 3670.    
  • 2. Kaur P, Sekhon SS, Kumar V (2012) Empty cage to three-dimensional structural transition in nanoparticles of III–V compound semiconductors: The finding of magic (AlP)13 and (GaP)32. Phys Rev B 85: 085429.    
  • 3. Karamanis P, Pouchan C, Weatherford CA, et al. (2011) Evolution of properties in prolate (GaAs) n clusters. J Phys Chem C 115: 97–107.    
  • 4. Malloci G, Chiodo L, Rubio A, et al. (2012) Structural and optoelectronic properties of unsaturated ZnO and ZnS nanoclusters. J Phys Chem C 116: 8741–8746.    
  • 5. Kwong HH, Feng YP, Boo TB (2001) Composition dependent properties of GaAs clusters. Comput Phys Commun 142: 290–294.    
  • 6. Yang JS, Li BX, Zhan SC (2006) Study of GaAs cluster ions using FP-LMTO MD method. Phys Lett A 348: 416–423.    
  • 7. Karthikeyan S, Deepika E, Murugan P (2012) Structural Stability and Electronic Properties of CdS Condensed Clusters. J Phys Chem C 116: 5981–5985.    
  • 8. Musa NM, Isa ARM, Kasmin MK (2008) Structures and bandgaps of small range gallium arsenide nanocluster. Malays J Fund Appl Sci 4: 451–455.    
  • 9. Deiss E, Holzer F, Haas O (2002) Modeling of an electrically rechargeable alkaline Zn–air battery. Electrochim Acta 47: 3995–4010.    
  • 10. Lee J, Lee P, Lee H, et al. (2012) Very long Ag nanowire synthesis and its application in a highly transparent, conductive and flexible metal electrode touch panel. Nanoscale 4: 6408–6414.    
  • 11. Chang СМ, Wei СМ, Chen SP (2000) Self-diffusion of small clusters on fcc metal (111) surfaces. Phys Rev Lett 85: 1044.    
  • 12. Chen Z, Shan Z, Li S, et al. (2004) A novel and simple growth route towards ultra-fine ZnO nanowires. J Cryst Growth 265: 482–486.    
  • 13. Jolk A, Klingshirn CF (1998) Linear and nonlinear excitonic absorption and photoluminescence spectra in Cu2O: Line shape analysis and exciton drift. Phys Status Solidi B 206: 841–850.    
  • 14. Muller E, Patterson BD, Spontaneous Ordering in AlGaAs, PSI annual report, 2000. Available from: www.physik.unizh.ch/reports/report2000.html.
  • 15. Patterson BD, Spontaneous Ordering in AlGaAs, PSI annual report, 1997. Available from: www.physik.unizh.ch/reports/report1999.html.
  • 16. Iskakova K, Akhmaltdinov R (2011) Modeling and calculation of the dynamic three-dimensional A3B5 models on the example of GaAs. Int J Appl Phys Math 1: 112.
  • 17. Iskakova K, Akhmaltdinov R (2012) Modeling and calculation of the algorithm structure of compound semiconductor-type A3B5. Appl Mech Mater 110–116: 2854–2858.
  • 18. Iskakova K, Akhmaltdinov R (2012) Modeling of the crystal structure growth process of GaAs. Appl Phys A-Mater 109: 857–864.    
  • 19. Iskakova K, Akhmaltdinov R, Amanova A (2014) The ideal "defects" of the crystal structure of GaAs. Adv Mater Res 936: 577–584.    
  • 20. Jensen F, Besenbacher F, Lægsgaard E, et al. (1991) Oxidation of Cu(111): two new oxygen induced reconstructions. Surf Sci 259: L774–L780.
  • 21. Zunger A (1997) Spontaneous atomic ordering in semiconductor alloys: Causes, carriers, and consequences. MRS Bull 22: 20–26.


This article has been cited by

  • 1. Kulpash Iskakova, Rif Akhmaltdinov, Orken Mamyrbayev, Production of thin copper oxide films and its electronic density, AIMS Materials Science, 2019, 6, 3, 454, 10.3934/matersci.2019.3.454
  • 2. Kulpash Iskakova, Rif Akhmaltdinov, Nickel oxide nanoparticles on the surface of the gallium arsenide nanocluster structure, Nanomaterials and Energy, 2019, 8, 2, 201, 10.1680/jnaen.19.00032

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