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Analysis of temperature dependent power supply voltage drop in graphene nanoribbon and Cu based power interconnects

1 School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, India
2 Department of Electronics and Communication Engineering, Assam University, Silchar, India

Topical Section: 2D Materials

In this paper, we propose a temperature dependent resistive model of multi layered graphene nanoribbon (MLGNR) and Cu based power interconnects. Using the proposed model, power supply voltage drop (IR-drop) analysis for 16 nm technology node is performed. The novelty in our work is that this is the first time a temperature dependent IR-Drop model for MLGNR and Cu interconnects is proposed. For a temperature range from 150 K to 450 K, the variation of resistance of MLGNR interconnect is ~2–5× times lesser than that of traditional copper based power interconnects. Our analysis shows that MLGNR based power interconnects can achieve ~1.5–3.5× reduction in IR-drop and ~1.5–3× reduction in propagation delay as compared with copper based interconnects for local, intermediate and global interconnects.
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1. Yamato Y, Yoneda T, Hatayama K, et al. (2012) A fast and accurate per-cell dynamic IR-drop estimation method for at-speed scan test pattern validation. IEEE International Test Conference (ITC).

2. Nithin SK, Shanmugam G, Chandrasekar S (2010) Dynamic voltage (IR) drop analysis and design closure: Issues and challenges. 11th International Symposium on Quality Electronic Design (ISQED).

3. Kumar A, Anis M (2010) IR-Drop Aware Clustering Technique for Robust Power Grid in FPGAs. IEEE T VLSI Syst 19: 1181–1191.

4. Vijayakumar A, Patil VC, Paladugu G, et al. (2014) On pattern generation for maximizing IR drop. 15th International Symposium on Quality Electronic Design (ISQED).

5. International Technology Roadmap for Semiconductors (ITRS-2013) Reports, 2013. Available from: http://www.itrs2.net/reports.html.

6. Naeemi A, Meindl JD (2008) Performance Benchmarking for Graphene Nanoribbon, Carbon Nanotube, and Cu Interconnects. International Interconnect Technology Conference (IITC).

7. Naeemi A, Meindl JD (2009) Compact Physics-Based Circuit Models for Graphene Nano-ribbon Interconnects. IEEE T Electron Dev 56: 1822–1833.    

8. Naeemi A, Meindl JD (2007) Conductance Modeling for Graphene Nanoribbon (GNR) Interconnects. IEEE Electr Device L 28: 428–431.    

9. Xu C, Li H, Banerjee K (2009) Modeling, Analysis, and Design of Graphene Nano-Ribbon Interconnects. IEEE T Electron Dev 56: 1567–1578.    

10. Nasiri SH, Moravvej-Farshi MK, Faez R (2010) Stability Analysis in Graphene Nanoribbon Interconnects. IEEE Electr Device L 31: 1458–1460.    

11. Tanachutiwat S, Liu SH, Geer R, Wei W (2009) Monolithic grapheme nanoribbon electronics for interconnect performance improvement. IEEE International Symposium on Circuits and Systems.

12. Das D, Rahaman H (2012) Modeling of IR-Drop induced delay fault in CNT and GNR power distribution networks. 5th International Conference on Computers and Devices for Communication (CODEC).

13. Das D, Rahaman H (2015) Carbon Nanotube and Graphene Nanoribbon Interconnects, 1st Eds., New York, CRC Press, 37–78.

14. Das D, Rahaman H (2012) Simultaneous switching noise and IR drop in graphene nanoribbon power distribution networks. 12th IEEE Conference on Nanotechnology (IEEE-NANO).

15. Alizadeh A, Sarvari R (2015) Temperature-Dependent Comparison Between Delay of CNT and Copper Interconnects. IEEE T VLSI Syst 9: 1–1.

16. Fratini S, Guinea F (2008) Substrate-limited electron dynamics in graphene. Phys Rev B Condens Matter Mater Phys 77: 195415.    

17. Fuchs K (1938) Conduction electrons in thin metallic films. In Proc Cambridge Phil Soc 34: 100.    

18. Sondheimer EH (1952) The mean free path of electrons in metals. Adv Phys 1: 1–42.    

19. Mayadas AF, Shatzkes M (1970) Electrical resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces. Phys Rev B Condens Matter Mater Phys 1: 1382–1389.    

20. Goetsch RJ, Anand VK, Pandey A, et al. (2012) Structural, thermal, magnetic, and electronic transport properties of the LaNi2(Ge1−xPx)2 system. Phys Rev B Condens Matter Mater Phys 85: 054517.    

21. Blatt FJ (1968) Physics of Electronic Conduction in Solids. McGraw-Hill, New York.

22. Bid A, Bora A, Raychaudhuri AK (2006) Temperature dependence of the resistance of metallic nanowires of diameter ≥15 nm: applicability of Bloch-Grüneisen theorem. Phys Rev B Condens Matter Mater Phys 3: 1–9.

23. Gusakova D, Ryzhanova N, Vedyayev A, et al. (2004) Influence of s-d scattering on the electron density of states in ferromagnet/superconductor bilayer. J Magn Magn Mater 42: 873–882.

24. Predictive Technology Model, 2008. Available from: http://ptm.asu.edu.

Copyright Info: © 2016, Sandip Bhattacharya, et al., licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution Licese (http://creativecommons.org/licenses/by/4.0)

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