The role of impurities in the shape, structure and physical properties of semiconducting oxide nanostructures grown by thermal evaporation

Iñaki López; Teresa Cebriano; Pedro Hidalgo; Emilio Nogales; Javier Piqueras; Bianchi Méndez; Iñaki López; Teresa Cebriano; Pedro Hidalgo; Emilio Nogales; Javier Piqueras; Bianchi Méndez

doi:10.3934/matersci.2016.2.425

AIMS Materials Science

2016, Volume 3, Issue 2: 425-433. doi: 10.3934/matersci.2016.2.425

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The role of impurities in the shape, structure and physical properties of semiconducting oxide nanostructures grown by thermal evaporation

1.
Department of Materials Physics, University Complutense of Madrid, 28040, Madrid, Spain
2.
Istituto Nazionale di Ottica (INO) – CNR, Via Carrara 1, 50019 Sesto Fiorentino FI, Italy

Received: 27 January 2016 Accepted: 20 March 2016 Published: 23 March 2016

A thermal evaporation method developed in the research group enables to grow and design several morphologies of semiconducting oxide nanostructures, such as Ga₂O₃, GeO₂ or Sb₂O₃, among others, and some ternary oxide compounds (ZnGa₂O₄, Zn₂GeO₄). In order to tailor physical properties, a successful doping of these nanostructures is required. However, for nanostructured materials, doping may affect not only their physical properties, but also their morphology during the thermal growth process. In this paper, we will show some examples of how the addition of impurities may result into the formation of complex structures, or changes in the structural phase of the material. In particular, we will consider the addition of Sn and Cr impurities into the precursors used to grow Ga₂O₃, Zn₂GeO₄ and Sb₂O₃nanowires, nanorods or complex nanostructures, such as crossing wires or hierarchical structures. Structural and optical properties were assessed by electron microscopy (SEM and TEM), confocal microscopy, spatially resolved cathodoluminescence (CL), photoluminescence, and Raman spectroscopies. The growth mechanisms, the luminescence bands and the optical confinement in the obtained oxide nanostructures will be discussed. In particular, some of these nanostructures have been found to be of interest as optical microcavities. These nanomaterials may have applications in optical sensing and energy devices.
- oxide nanowires,
- vapor-solid mechanism,
- luminescence,
- optical confinement
Citation: Iñaki López, Teresa Cebriano, Pedro Hidalgo, Emilio Nogales, Javier Piqueras, Bianchi Méndez. The role of impurities in the shape, structure and physical properties of semiconducting oxide nanostructures grown by thermal evaporation[J]. AIMS Materials Science, 2016, 3(2): 425-433. doi: 10.3934/matersci.2016.2.425

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Abstract

A thermal evaporation method developed in the research group enables to grow and design several morphologies of semiconducting oxide nanostructures, such as Ga₂O₃, GeO₂ or Sb₂O₃, among others, and some ternary oxide compounds (ZnGa₂O₄, Zn₂GeO₄). In order to tailor physical properties, a successful doping of these nanostructures is required. However, for nanostructured materials, doping may affect not only their physical properties, but also their morphology during the thermal growth process. In this paper, we will show some examples of how the addition of impurities may result into the formation of complex structures, or changes in the structural phase of the material. In particular, we will consider the addition of Sn and Cr impurities into the precursors used to grow Ga₂O₃, Zn₂GeO₄ and Sb₂O₃nanowires, nanorods or complex nanostructures, such as crossing wires or hierarchical structures. Structural and optical properties were assessed by electron microscopy (SEM and TEM), confocal microscopy, spatially resolved cathodoluminescence (CL), photoluminescence, and Raman spectroscopies. The growth mechanisms, the luminescence bands and the optical confinement in the obtained oxide nanostructures will be discussed. In particular, some of these nanostructures have been found to be of interest as optical microcavities. These nanomaterials may have applications in optical sensing and energy devices.

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