Silicon carbide (SiC), a leading third-generation wide-bandgap semiconductor, exhibits exceptional electrical, thermal, and mechanical properties, including a high breakdown field, superior thermal conductivity, and remarkable environmental stability, making it indispensable for high-power electronics, high-temperature applications, and advanced composites. This review systematically outlines recent advances in SiC materials, with an emphasis on crystal structure characteristics, innovative synthesis routes, and cross-disciplinary applications. The polytypism of SiC and structure—property correlations governing its band structure and carrier mobility—are elucidated. A comparative analysis is then provided on controllable preparation strategies for micro/nano SiC powders, highlighting emerging eco-friendly and low-temperature synthesis pathways. Furthermore, the mechanisms underlying SiC's performance in structural ceramics, catalytic supports, microwave absorption, and supercapacitors are comprehensively discussed, with particular attention paid to its wide-temperature stability and interface enhancement effects. Finally, prevailing challenges in scalable synthesis and defect control are addressed, along with several promising research directions: (1) defect-engineered quantum sensing platforms; (2) low-carbon manufacturing using biomass-derived carbon sources; and (3) deep integration of SiC power devices with smart grid architectures. This review aims to provide theoretical insights and technical guidance for the multi-scale design and application of SiC materials in the fields of new energy and quantum technologies.
Citation: Aoyi Dong, Shaoyi Shen, Jialin Wang, Xinxin Liu, Bibo Han, Song Wu, Xinhua Zheng, Yaguang Sun, Shikai Liu. Advances in synthesis strategies and multifunctional applications of silicon carbide materials[J]. AIMS Materials Science, 2025, 12(5): 1069-1091. doi: 10.3934/matersci.2025050
Silicon carbide (SiC), a leading third-generation wide-bandgap semiconductor, exhibits exceptional electrical, thermal, and mechanical properties, including a high breakdown field, superior thermal conductivity, and remarkable environmental stability, making it indispensable for high-power electronics, high-temperature applications, and advanced composites. This review systematically outlines recent advances in SiC materials, with an emphasis on crystal structure characteristics, innovative synthesis routes, and cross-disciplinary applications. The polytypism of SiC and structure—property correlations governing its band structure and carrier mobility—are elucidated. A comparative analysis is then provided on controllable preparation strategies for micro/nano SiC powders, highlighting emerging eco-friendly and low-temperature synthesis pathways. Furthermore, the mechanisms underlying SiC's performance in structural ceramics, catalytic supports, microwave absorption, and supercapacitors are comprehensively discussed, with particular attention paid to its wide-temperature stability and interface enhancement effects. Finally, prevailing challenges in scalable synthesis and defect control are addressed, along with several promising research directions: (1) defect-engineered quantum sensing platforms; (2) low-carbon manufacturing using biomass-derived carbon sources; and (3) deep integration of SiC power devices with smart grid architectures. This review aims to provide theoretical insights and technical guidance for the multi-scale design and application of SiC materials in the fields of new energy and quantum technologies.
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Figures(6) / Tables(2)
Aoyi Dong, Shaoyi Shen, Jialin Wang, Xinxin Liu, Bibo Han, Song Wu, Xinhua Zheng, Yaguang Sun, Shikai Liu. Advances in synthesis strategies and multifunctional applications of silicon carbide materials[J]. AIMS Materials Science, 2025, 12(5): 1069-1091. doi: 10.3934/matersci.2025050
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