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Influence of MAPbI3 absorber layer properties on WO3/MAPbI3/GO perovskite solar cells' performance using SCAPS-1D

  • Published: 29 September 2026
  • The solar cell capacitance simulator in one dimension was used to examine how the perovskite layer's properties influence devices' performance in a simulated solar cell structure comprising graphene oxide (GO) as the hole transport material (HTL), tungsten trioxide (WO3) as the electron transport material (ETL), and methylammonium lead iodide (MAPbI3) as the absorber layer. The simulation investigated the effects of the MAPbI3 layer's thickness, defect density, electron affinity, and doping concentration on photovoltaic parameters. The baseline nonoptimized structure yielded a power conversion efficiency (PCE) of 7.1%, with a short-circuit current density (Jsc) of 11.38 mA/cm2, an open-circuit voltage (Voc) of 0.80 V, and a fill factor (FF) of 77.9%. Optimization of the MAPbI3 layer's thickness to 1.2 µm and the acceptor doping density to 1.0 × 1022 cm-3 improved the $ \mathrm{P}\mathrm{C}\mathrm{E} $ to 22.9%, with Jsc = 28 mA/cm2, Voc = 0.93 V, and FF = 87.4%. These improvements stem from enhanced light absorption and more efficient charge separation. Alternating current (AC) analysis through capacitance–voltage and electrochemical impedance spectroscopy indicated that optimized doping reduces series resistance and modifies the depletion region's width, though the interpretation of the Nyquist plots requires careful consideration of competing transport and recombination processes. These findings provide guidance for experimental design of perovskite solar cells, though the simulated efficiencies represent theoretical upper bounds that may not be achievable experimentally with these transport layer materials.

    Citation: Saleh R. Al-Bashaish, Hmoud Al Dmour, Bonginkosi V. Kheswa, Selma Rabhi, Nabil Bouri, Ahmad M. D. (Assa'd) Jaber, Ahmad Telfah. Influence of MAPbI3 absorber layer properties on WO3/MAPbI3/GO perovskite solar cells' performance using SCAPS-1D[J]. AIMS Energy, 2026, 14(5): 1142-1163. doi: 10.3934/energy.2026045

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  • The solar cell capacitance simulator in one dimension was used to examine how the perovskite layer's properties influence devices' performance in a simulated solar cell structure comprising graphene oxide (GO) as the hole transport material (HTL), tungsten trioxide (WO3) as the electron transport material (ETL), and methylammonium lead iodide (MAPbI3) as the absorber layer. The simulation investigated the effects of the MAPbI3 layer's thickness, defect density, electron affinity, and doping concentration on photovoltaic parameters. The baseline nonoptimized structure yielded a power conversion efficiency (PCE) of 7.1%, with a short-circuit current density (Jsc) of 11.38 mA/cm2, an open-circuit voltage (Voc) of 0.80 V, and a fill factor (FF) of 77.9%. Optimization of the MAPbI3 layer's thickness to 1.2 µm and the acceptor doping density to 1.0 × 1022 cm-3 improved the $ \mathrm{P}\mathrm{C}\mathrm{E} $ to 22.9%, with Jsc = 28 mA/cm2, Voc = 0.93 V, and FF = 87.4%. These improvements stem from enhanced light absorption and more efficient charge separation. Alternating current (AC) analysis through capacitance–voltage and electrochemical impedance spectroscopy indicated that optimized doping reduces series resistance and modifies the depletion region's width, though the interpretation of the Nyquist plots requires careful consideration of competing transport and recombination processes. These findings provide guidance for experimental design of perovskite solar cells, though the simulated efficiencies represent theoretical upper bounds that may not be achievable experimentally with these transport layer materials.



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