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Variation of the electronic properties of the silicene nanosheet passivated by hydrogen atoms: A DFT investigation

1 Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
2 Department of Mechanical Engineering, Langroud Branch, Islamic Azad University, Langroud, Iran
3 Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran

Using the first-principles calculations, the electronic properties of hydrogenated silicene (H-silicene) has been investigated. The influence of the hydrogenation on the bandgap and I-V characteristics of the silicene is evaluated. It is shown that the H-silicene has an indirect band gap, with the value of 2.33 eV while silicene nanosheet represents a semi-metallic behavior with a zero band gap and Dirac cone at the Fermi level. Some unique properties of H-silicene is observed which make it ideal for variety of applications in designing spintronic devices, optoelectronics devices, transparent conducting electrodes, and integrated circuits.
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© 2019 the Author(s), licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution Licese (http://creativecommons.org/licenses/by/4.0)

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