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Effects of light on the resistivity of chemical vapor deposited graphene films

1 Department of Physics, University of North Texas, Denton, Texas 76203
2 Department of Physics, Southern University and A & M College, Baton Rouge, LA 70813
3 Department of Computer Science/LONI, Southern University and A & M College, Baton Rouge, LA 70813

Topical Section: 2D Materials

We report that the resistance of a chemical vapor deposition (CVD) grown graphene film transferred onto an SiO2 substrate increases to higher saturation values upon exposure to light of decreasing wavelength from the visible to ultraviolet. Light in the visible range causes a slight increase of up to 10% in saturation resistance. A significant increase in resistance is found starting at about 400 nm. The saturation resistance approaches up to 3 times the original resistance at 254 nm after 5 min. When the light is removed, the resistance falls to its original value with a time constant of several days. The effect is not observed for samples of CVD-grown graphene films on SiO2 that have been heated in vacuum at 600 ℃, nor single-crystal graphene mechanically exfoliated onto SiO2. We attribute the effect to photo dissociation of interfacial molecules such as H2O adsorbed between the CVD-grown film and SiO2 substrate at grain boundaries in the film.
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Keywords graphene; electronic properties; defects; light exposure; water adsorbates

Citation: Yudong Mo, Jose M. Perez, Zhou Ye, Lei Zhao, Shizhong Yang, Liuxi Tan, Zhaodong Li, Feng Gao, Guanglin Zhao. Effects of light on the resistivity of chemical vapor deposited graphene films. AIMS Materials Science, 2016, 3(4): 1426-1435. doi: 10.3934/matersci.2016.4.1426


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Copyright Info: 2016, Jose M. Perez, et al., licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution Licese (http://creativecommons.org/licenses/by/4.0)

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