Export file:

Format

  • RIS(for EndNote,Reference Manager,ProCite)
  • BibTex
  • Text

Content

  • Citation Only
  • Citation and Abstract

Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, NSW, Australia

Special Issues: Multifunctional Oxide Materials

The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.
  Figure/Table
  Supplementary
  Article Metrics
Download full text in PDF

Export Citation

Article outline

Copyright © AIMS Press All Rights Reserved