Export file:


  • RIS(for EndNote,Reference Manager,ProCite)
  • BibTex
  • Text


  • Citation Only
  • Citation and Abstract

Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, NSW, Australia

Special Issues: Multifunctional Oxide Materials

The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.
  Article Metrics


1. Liu SQ, Wu NJ, Ignatiev A (2000) Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl Phys Lett 76: 2749-2751.    

2. Yang JJ, Pickett MD, Li X, et al. (2008) Memristive switching mechanism for metal//oxide//metal nanodevices. Nat Nano 3: 429-433.    

3. Wu SX, Li XY, Xing XJ, et al. (2009) Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device. Appl Phys Lett 94: 253504-253503.

4. Beck A, Bednorz JG, Gerber C, et al. (2000) Reproducible switching effect in thin oxide films for memory applications. Appl Phys Lett 77: 139-141.    

5. Chua L (1971) Memristor-The missing circuit element. IEEE Transactions on Circuits Theory 18:507-519.    

6. Seo JW, Park J-W, Lim KS, et al. (2008) Transparent resistive random access memory and its characteristics for nonvolatile resistive switching. Appl Phys Lett 93: 223505-223503.    

7. Strukov DB, Snider GS, Stewart DR, et al. (2008) The missing memristor found. Nature 453:80-83.    

8. Seo S, Lee MJ, Seo DH, et al. (2004) Reproducible resistance switching in polycrystalline NiO films. Appl Phys Lett 85: 5655-5657.    

9. Choi BJ, Jeong DS, Kim SK, et al. (2005) Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition. J Appl Phys 98: 033715-033710.    

10. Chen A, Haddad S, Wu YC, et al. (2008) Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory. Appl Phys Lett 92: 013503-013503.    

11. Villafuerte M, Heluani SP, Juarez G, et al. (2007) Electric-pulse-induced reversible resistance in doped zinc oxide thin films. Appl Phys Lett 90: 052105-052103.    

12. Younis A, Chu D, Li S (2013) Bi-stable resistive switching characteristics in Ti-doped ZnO thin films. Nanoscale Res Lett 8: 1-6.    

13. Sun W, Zhang K, Wang F, et al. (2013) Resistive Switching Characteristics of Zinc Oxide Resistive RAM Doped with Nickel. ECS Transactions 52: 1009-1014.    

14. Peng C-N, Wang C-W, Chan T-C, et al. (2012) Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation. Nanoscale Res Lett 7: 559.    

15. Chang W (2010) Resistive switching behaviors of ZnO nanorod layers. Appl Phys Lett 96:242109.    

Copyright Info: © 2015, Adnan Younis, et al., licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution Licese (http://creativecommons.org/licenses/by/4.0)

Download full text in PDF

Export Citation

Article outline

Show full outline
Copyright © AIMS Press All Rights Reserved