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Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

  • Received: 03 March 2015 Accepted: 19 March 2015 Published: 01 April 2015
  • The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

    Citation: Shuhan Jing, Adnan Younis, Dewei Chu, Sean Li. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films[J]. AIMS Materials Science, 2015, 2(2): 28-36. doi: 10.3934/matersci.2015.2.28

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  • The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.


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  • © 2015 the Author(s), licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0)
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